InGaAsN/GaAs Quantum-well Laser Diodes

Author(s)
Wang, S.Z.; Yoon, Soon Fatt
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Abstract
GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented.
Date issued
2004-01
URI
http://hdl.handle.net/1721.1/3906
Series/Report no.
Innovation in Manufacturing Systems and Technology (IMST);
Keywords
InGaAsN/GaAs, quantum well, molecular beam epitaxy, laser diode
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