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dc.contributor.authorJoannopoulos, John D.en_US
dc.contributor.authorKaxiras, Efthimiosen_US
dc.contributor.authorAlerhand, Oscar L.en_US
dc.contributor.authorArias, Tomas A.en_US
dc.contributor.authorNeedels, Mark F.en_US
dc.contributor.authorRappe, Andrew M.en_US
dc.contributor.authorTarnow, Eugen G.en_US
dc.contributor.authorWang, Jingen_US
dc.date.accessioned2010-07-16T04:07:40Z
dc.date.available2010-07-16T04:07:40Z
dc.date.issued1989-01-01 to 1989-12-31en_US
dc.identifierRLE_PR_132_01_03s_03en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57093
dc.descriptionContains introduction and reports on two research projects.en_US
dc.description.sponsorshipJoint Services Electronics Program DAAL03-89-C-0001en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofSurfaces and Interfacesen_US
dc.relation.ispartofSemiconductor Surface Studiesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherSemiconductor Surface Studiesen_US
dc.subject.otherThermal Amplitudes of Surface Atomsen_US
dc.subject.otherHeteroepitaxial Growthen_US
dc.titleSemiconductor Surface Studiesen_US
dc.typeTechnical Reporten_US


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