| dc.contributor.author | Fonstad, Clifton J., Jr. | en_US |
| dc.contributor.author | Choi, Woo-Young | en_US |
| dc.contributor.author | Smith, Henry I. | en_US |
| dc.contributor.author | Hirayama, Yuzo | en_US |
| dc.contributor.author | Smet, Jurgen H. | en_US |
| dc.contributor.author | Ippen, Erich P. | en_US |
| dc.contributor.author | Hu, Qing | en_US |
| dc.contributor.author | Martin, Paul S. | en_US |
| dc.contributor.author | Haus, Hermann A. | en_US |
| dc.contributor.author | Royter, Yakov | en_US |
| dc.contributor.author | Hopps, J. H. | en_US |
| dc.contributor.author | Shenoy, Krishna V. | en_US |
| dc.contributor.author | Mikkelson, J. | en_US |
| dc.contributor.author | Elman, B. | en_US |
| dc.contributor.author | Nuytkens, P. R. | en_US |
| dc.contributor.author | Grot, A. C. | en_US |
| dc.contributor.author | Psaltis, D. | en_US |
| dc.contributor.author | Aggarwal, Rajni J. | en_US |
| dc.contributor.author | Peng, Lung-Han | en_US |
| dc.contributor.author | Jones, R. Victor | en_US |
| dc.contributor.author | Ehrenrich, Victor | en_US |
| dc.date.accessioned | 2010-07-16T05:12:39Z | |
| dc.date.available | 2010-07-16T05:12:39Z | |
| dc.date.issued | 1992-01-01 to 1992-12-31 | en_US |
| dc.identifier | RLE_PR_135_01_01s_01 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/57213 | |
| dc.description | Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications. | en_US |
| dc.description.sponsorship | DARPA/NCIPT | en_US |
| dc.description.sponsorship | Joint Services Electronics Program Contract DAAL03-92-C-0001 | en_US |
| dc.description.sponsorship | National Science Foundation | en_US |
| dc.description.sponsorship | Toshiba Corporation Ltd. | en_US |
| dc.description.sponsorship | Charles S. Draper Laboratories | en_US |
| dc.description.sponsorship | Hertz Foundation Fellowship | en_US |
| dc.description.sponsorship | Vitesse Semiconductor | en_US |
| dc.description.sponsorship | GTE Laboratories | en_US |
| dc.description.sponsorship | National Science Foundation Fellowship | en_US |
| dc.description.sponsorship | DARPA/MOSIS | en_US |
| dc.description.sponsorship | Texas Instruments, Inc. | en_US |
| dc.description.sponsorship | U.S. Army Research Office Grant DAAL03-92-G-0251 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
| dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992 | en_US |
| dc.relation.ispartof | Solid State Physics, Electronics and Optics | en_US |
| dc.relation.ispartof | Materials and Fabrication | en_US |
| dc.relation.ispartof | Heterostructures for High Performance Devices | en_US |
| dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135 | en_US |
| dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
| dc.subject.other | Heterostructures for High Performance Devices | en_US |
| dc.subject.other | MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications | en_US |
| dc.subject.other | Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy | en_US |
| dc.subject.other | Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy | en_US |
| dc.subject.other | Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures | en_US |
| dc.subject.other | Growth of High Quality InGaAIAs Multiple Quantum Wells | en_US |
| dc.subject.other | Characterization of High Quality InGaAIAs Multiple Quantum Wells | en_US |
| dc.subject.other | New Three-Terminal Laser Diodes with Dynamic Control of Gain | en_US |
| dc.subject.other | New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index | en_US |
| dc.subject.other | Laser Diode Modeling for Narrow Linewidth Operation | en_US |
| dc.subject.other | Laser Diode Design for Narrow Linewidth Operation | en_US |
| dc.subject.other | Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy | en_US |
| dc.subject.other | Low Temperature Growth of GaAIAs Laser Diodes | en_US |
| dc.subject.other | Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs | en_US |
| dc.subject.other | Optical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICs | en_US |
| dc.subject.other | High Density GaAs MESFET-based OEIC Neural Systems | en_US |
| dc.subject.other | Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI | en_US |
| dc.subject.other | Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures | en_US |
| dc.subject.other | Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures | en_US |
| dc.subject.other | Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels | en_US |
| dc.subject.other | Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors | en_US |
| dc.subject.other | Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors | en_US |
| dc.subject.other | Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors | en_US |
| dc.subject.other | Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams | en_US |
| dc.subject.other | Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams | en_US |
| dc.title | Heterostructures for High Performance Devices | en_US |
| dc.type | Technical Report | en_US |
