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dc.contributor.authorFonstad, Clifton J., Jr.en_US
dc.contributor.authorChoi, Woo-Youngen_US
dc.contributor.authorSmith, Henry I.en_US
dc.contributor.authorHirayama, Yuzoen_US
dc.contributor.authorSmet, Jurgen H.en_US
dc.contributor.authorIppen, Erich P.en_US
dc.contributor.authorHu, Qingen_US
dc.contributor.authorMartin, Paul S.en_US
dc.contributor.authorHaus, Hermann A.en_US
dc.contributor.authorRoyter, Yakoven_US
dc.contributor.authorHopps, J. H.en_US
dc.contributor.authorShenoy, Krishna V.en_US
dc.contributor.authorMikkelson, J.en_US
dc.contributor.authorElman, B.en_US
dc.contributor.authorNuytkens, P. R.en_US
dc.contributor.authorGrot, A. C.en_US
dc.contributor.authorPsaltis, D.en_US
dc.contributor.authorAggarwal, Rajni J.en_US
dc.contributor.authorPeng, Lung-Hanen_US
dc.contributor.authorJones, R. Victoren_US
dc.contributor.authorEhrenrich, Victoren_US
dc.date.accessioned2010-07-16T05:12:39Z
dc.date.available2010-07-16T05:12:39Z
dc.date.issued1992-01-01 to 1992-12-31en_US
dc.identifierRLE_PR_135_01_01s_01en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57213
dc.descriptionContains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications.en_US
dc.description.sponsorshipDARPA/NCIPTen_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-92-C-0001en_US
dc.description.sponsorshipNational Science Foundationen_US
dc.description.sponsorshipToshiba Corporation Ltd.en_US
dc.description.sponsorshipCharles S. Draper Laboratoriesen_US
dc.description.sponsorshipHertz Foundation Fellowshipen_US
dc.description.sponsorshipVitesse Semiconductoren_US
dc.description.sponsorshipGTE Laboratoriesen_US
dc.description.sponsorshipNational Science Foundation Fellowshipen_US
dc.description.sponsorshipDARPA/MOSISen_US
dc.description.sponsorshipTexas Instruments, Inc.en_US
dc.description.sponsorshipU.S. Army Research Office Grant DAAL03-92-G-0251en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofHeterostructures for High Performance Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherHeterostructures for High Performance Devicesen_US
dc.subject.otherMBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applicationsen_US
dc.subject.otherDesign of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxyen_US
dc.subject.otherFabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxyen_US
dc.subject.otherFeasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructuresen_US
dc.subject.otherGrowth of High Quality InGaAIAs Multiple Quantum Wellsen_US
dc.subject.otherCharacterization of High Quality InGaAIAs Multiple Quantum Wellsen_US
dc.subject.otherNew Three-Terminal Laser Diodes with Dynamic Control of Gainen_US
dc.subject.otherNew Three-Terminal Laser Diodes with Dynamic Control of Refractive Indexen_US
dc.subject.otherLaser Diode Modeling for Narrow Linewidth Operationen_US
dc.subject.otherLaser Diode Design for Narrow Linewidth Operationen_US
dc.subject.otherEvaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxyen_US
dc.subject.otherLow Temperature Growth of GaAIAs Laser Diodesen_US
dc.subject.otherOptical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICsen_US
dc.subject.otherOptical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICsen_US
dc.subject.otherHigh Density GaAs MESFET-based OEIC Neural Systemsen_US
dc.subject.otherApplications of Resonant Tunneling Diodes in GaAs MESFET VLSIen_US
dc.subject.otherInvestigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructuresen_US
dc.subject.otherInfrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructuresen_US
dc.subject.otherAnalysis of the Symmetry Properties of Quantum Well Subband Energy Levelsen_US
dc.subject.otherMicrowave Characterization of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Analysis of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Modeling of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherDamage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beamsen_US
dc.subject.otherDamage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beamsen_US
dc.titleHeterostructures for High Performance Devicesen_US
dc.typeTechnical Reporten_US


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