Oblique Angle Deposition of Germanium Film on Silicon Substrate

dc.contributor.author	Chew, Han Guan
dc.contributor.author	Choi, Wee Kiong
dc.contributor.author	Chim, Wai Kin
dc.contributor.author	Fitzgerald, Eugene A.
dc.date.accessioned	2004-12-10T14:08:26Z
dc.date.available	2004-12-10T14:08:26Z
dc.date.issued	2005-01
dc.identifier.uri	http://hdl.handle.net/1721.1/7370
dc.description.abstract	The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	1682300 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en
dc.relation.ispartofseries	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	Oblique angle deposition	en
dc.subject	Germanium nanowires	en
dc.title	Oblique Angle Deposition of Germanium Film on Silicon Substrate	en
dc.type	Article	en