The effects of rapid thermal annealing on gallium arsenide grown by MOCVD on silicon substrates

Author(s)
Lehman, LeNore Louise.
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Massachusetts Institute of Technology. Department of Materials Science and Engineering.
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Description
Thesis: M.S., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1988
 
Includes bibliographical references.
 
Date issued
1988
URI
https://hdl.handle.net/1721.1/163997
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Publisher
Massachusetts Institute of Technology
Keywords
Materials Science and Engineering.
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