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The effects of rapid thermal annealing on gallium arsenide grown by MOCVD on silicon substrates

dc.contributor.authorLehman, LeNore Louise.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Materials Science and Engineering.en_US
dc.date.accessioned2025-11-24T21:15:16Z
dc.date.available2025-11-24T21:15:16Z
dc.date.copyright1988en_US
dc.date.issued1988en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/163997
dc.descriptionThesis: M.S., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1988en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.statementofresponsibilityby LeNore Louise Lehman.en_US
dc.format.extent84 leavesen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleThe effects of rapid thermal annealing on gallium arsenide grown by MOCVD on silicon substratesen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.identifier.oclc19293290en_US
dc.description.collectionM.S. Massachusetts Institute of Technology, Department of Materials Science and Engineeringen_US
dspace.imported2025-11-24T21:15:15Zen_US
mit.thesis.degreeMasteren_US


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