Advanced Materials for Micro- and Nano-Systems (AMMNS): Recent submissions
Now showing items 22-24 of 122
-
Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer
(2005-01)We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ... -
Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits
(2005-01)Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ... -
Poly-Si₁â‚‹xGex Film Growth for Ni Germanosilicided Metal Gate
(2005-01)Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...
