Now showing items 25-27 of 122

    • Oblique Angle Deposition of Germanium Film on Silicon Substrate 

      Chew, Han Guan; Choi, Wee Kiong; Chim, Wai Kin; Fitzgerald, Eugene A. (2005-01)
      The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal ...
    • Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering 

      Kan, Eric Win Hong; Koh, B.H.; Choi, Wee Kiong; Chim, Wai Kin; Antoniadis, Dimitri A.; e.a. (2005-01)
      Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...
    • High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching 

      Vajpeyi, Agam P.; Chua, Soo-Jin; Tripathy, S.; Fitzgerald, Eugene A. (2005-01)
      Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman ...