Advanced Materials for Micro- and Nano-Systems (AMMNS): Recent submissions
Now showing items 28-30 of 122
-
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
(2005-01)The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ... -
High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
(2005-01)High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by ... -
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
(2005-01)Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ...
